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Effect of annealing conditions on the electrical properties of ALD-grown polycrystalline BiFeO3 films
Journal article   Peer reviewed

Effect of annealing conditions on the electrical properties of ALD-grown polycrystalline BiFeO3 films

Iryna S. Golovina, Matthias Falmbigl, Aleksandr V. Plokhikh, Thomas C. Parker, Craig Johnson and Jonathan E. Spanier
Journal of materials chemistry. C, Materials for optical and electronic devices, v 6(20), pp 5462-5472
28 May 2018

Abstract

Materials Science Materials Science, Multidisciplinary Physical Sciences Physics Physics, Applied Science & Technology Technology
An investigation of the influence of annealing conditions on the carrier transport, leakage current and dielectric properties of ALD-grown amorphous Bi-Fe-O thin films after their crystallization into BiFeO3 is presented. Whereas the interface-limited Schottky emission mechanism is dominant in 70 nm thick Fe-rich films after relatively short annealing, a space-charge-limited conduction mechanism is dominant in stoichiometric films with a thickness of 215 nm independent of the annealing conditions. Interestingly, prolonged annealing of the thin films also results in space charge limited conduction. Analysis of the changes in dielectric properties, on one hand, and the film composition, microstructure and morphology, on the other hand, reveal the key role of grain boundary interfaces for the conductivity of the polycrystalline ALD-grown BiFeO3 thin films. Extended annealing in oxygen results in 2-3 orders-of-magnitude reduction in leakage current accompanied by decreases in dielectric loss, highlighting the importance of optimizing annealing conditions for any applications of BiFeO3 thin films.

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Web of Science research areas
Materials Science, Multidisciplinary
Physics, Applied
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