Journal article
Enhanced Raman scattering from individual semiconductor nanocones and nanowires
Physical review letters, v 96(15), pp 157402-157402
21 Apr 2006
PMID: 16712194
Featured in Collection : UN Sustainable Development Goals @ Drexel
Abstract
We report strong enhancement (approximately 10(3)) of the spontaneous Raman scattering from individual silicon nanowires and nanocones as compared with bulk Si. The observed enhancement is diameter (d), excitation wavelength (lambda(laser)), and incident polarization state dependent, and is explained in terms of a resonant behavior involving incident electromagnetic radiation and the structural dielectric cross section. The variation of the Raman enhancement with d, lambda(laser), and polarization is shown to be in good agreement with model calculations of scattering from an infinite dielectric cylinder.
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Details
- Title
- Enhanced Raman scattering from individual semiconductor nanocones and nanowires
- Creators
- Linyou Cao - Department of Materials Science and Engineering, Drexel University, 3141 Chestnut Street, Philadelphia, Pennsylvania 19104, USABahram NabetJonathan E Spanier
- Publication Details
- Physical review letters, v 96(15), pp 157402-157402
- Publisher
- Cold Spring Harbor Press; United States
- Resource Type
- Journal article
- Language
- English
- Academic Unit
- Electrical and Computer Engineering; Mechanical Engineering and Mechanics
- Web of Science ID
- WOS:000236969700063
- Scopus ID
- 2-s2.0-33645817717
- Other Identifier
- 991014878413704721
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InCites Highlights
Data related to this publication, from InCites Benchmarking & Analytics tool:
- Web of Science research areas
- Physics, Multidisciplinary