Journal article
Epitaxial growth of ZnO nanowires on a- and c-plane sapphire
Journal of crystal growth, Vol.274(3-4), pp.407-411
01 Feb 2005
Abstract
Epitaxial ZnO nanowires were grown on a- and c-plane sapphire substrates by metalorganic chemical vapor deposition without metal catalysts or templates. Nanowires with monodisperse diameters grow in dense arrays perpendicular to a-plane sapphire and with in-plane rotational alignment due to [0001]zno(parallel to)[1120]sapphire, [1120]ZnO [0001]sapphire epitaxy. On c-plane sapphire, multiple possible epitaxial relations give a mixture of nanowire orientations. The majority of the nanowires grow in one of the three directions all at an angle of 51.8DG off the substrate plane with [0001]ZnO(parallel to)[1014]sapphire [1010]ZnO(parallel to)[1210]sapphire epitaxy. A small fraction of the nanowires grow perpendicular to the substrate with [0001]ZnO(parallel to)[0001]sapphire.
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Details
- Title
- Epitaxial growth of ZnO nanowires on a- and c-plane sapphire
- Creators
- Jason B BaxterEray S Aydil
- Publication Details
- Journal of crystal growth, Vol.274(3-4), pp.407-411
- Publisher
- Elsevier
- Resource Type
- Journal article
- Language
- English
- Academic Unit
- Chemical and Biological Engineering
- Identifiers
- 991014878547504721