Journal article
Exotic Photothermal Response in Ti‐Based MXene Optoelectronic Devices
Advanced electronic materials, v 11(13), 2500017
20 Aug 2025
Abstract
MXenes represent one‐of‐a‐kind materials to devise radically novel technologies and achieve breakthroughs in optoelectronics. To exploit their full potential, precise control over the influence of stoichiometry on optical and thermal properties, as well as device performance, must be achieved. Here, the characteristics of optoelectronic devices based on Ti 3 C 2 T x and Ti 2 CT x thin films are uncovered, highlighting the striking difference in their photothermal responses to laser irradiation under different experimental conditions. Even though their absorption coefficients at 450 nm are comparable, the thermal excitation and relaxation phenomena display markedly different kinetics: Ti 2 CT x devices show a strong asymmetry during the heating‐cooling cycle, with the heat dissipation kinetics being three orders of magnitude slower than Ti 3 C 2 T x and strongly influenced by environmental conditions. The findings are expected to stimulate fundamental investigations into the photothermal response of MXenes and open exciting prospects for their use in printed and wearable optoelectronics, including memory devices and neuromorphic computing.
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Details
- Title
- Exotic Photothermal Response in Ti‐Based MXene Optoelectronic Devices
- Creators
- Stefano Ippolito - Drexel UniversityFrancesca Urban - Université de StrasbourgPaolo Samorì - University of Strasbourg, CNRS ISIS UMR 7006, 8 allée Gaspard Monge Strasbourg F‐67000 FranceJonathan E. Spanier - Drexel UniversityYury Gogotsi (Corresponding Author) - Drexel University
- Publication Details
- Advanced electronic materials, v 11(13), 2500017
- Publisher
- Wiley
- Number of pages
- 7
- Grant note
- National Nanotechnology Coordinating Office: W911NF-19-2-0119, W911NF-24-2-0100 Army Research Laboratory: NNCI-1542153 U.S. National Science Foundation: 2D-PRINTABLE (GA-101135196), HORIZON-CL4-2022-RESILIENCE-01, GA-101091572 EU through the Horizon Europe research and innovation programAgence Nationale de la Recherche: ANR-10-IDEX-0002 IdEx UnistraFoundationInstitut Universitaire de France (IUF)
The authors acknowledge the Army Research Laboratory for supporting this work under Cooperative Agreements no. W911NF-19-2-0119 and W911NF-24-2-0100. The device fabrication was carried out at the Singh Center for Nanotechnology (University of Pennsylvania), a member of the National Nanotechnology Coordinated Infrastructure (NNCI) network, which is supported by the U.S. National Science Foundation (Grant NNCI-1542153). The authors also acknowledge the EU through the Horizon Europe research and innovation program HORIZON-CL4-2023-DIGITAL-EMERGING-01-CNECT project 2D-PRINTABLE (GA-101135196) and HORIZON-CL4-2022-RESILIENCE-01 project GREENCAP (GA-101091572) as well as the Agence Nationale de la Recherche through the Interdisciplinary Thematic Institute SysChem via the IdEx Unistra (ANR-10-IDEX-0002) within the program Investissement d'Avenir, the Foundation Jean-Marie Lehn and the Institut Universitaire de France (IUF). The authors thank Marley Downes and Kateryna Shevchuk for their help during XRD and Raman characterization, respectively.
- Resource Type
- Journal article
- Language
- English
- Academic Unit
- Physics; Materials Science and Engineering; Mechanical Engineering and Mechanics; A.J. Drexel Nanomaterials Institute
- Web of Science ID
- WOS:001466295300001
- Scopus ID
- 2-s2.0-105002608093
- Other Identifier
- 991022048295404721
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- Collaboration types
- Domestic collaboration
- International collaboration
- Web of Science research areas
- Materials Science, Multidisciplinary
- Nanoscience & Nanotechnology
- Physics, Applied