Logo image
Giant enhancement in the ferroelectric field effect using a polarization gradient
Journal article   Open access   Peer reviewed

Giant enhancement in the ferroelectric field effect using a polarization gradient

Zongquan Gu, Mohammad A. Islam and Jonathan E. Spanier
Applied physics letters, v 107(16), p162901
19 Oct 2015
url
https://doi.org/10.1063/1.4933095View
Published, Version of Record (VoR)Maybe Open Access (Publisher Bronze) Open

Abstract

Physical Sciences Physics Physics, Applied Science & Technology
Coupling of switchable ferroelectric polarization with the carrier transport in an adjacent semiconductor enables a robust, non-volatile manipulation of the conductance in a host of low-dimensional systems, including the two-dimensional electron liquid that forms at the LaAlO3 (LAO)-SrTiO3 (STO) interface. However, strength of the gate-channel coupling is relatively weak, limited in part by the electrostatic potential difference across a ferroelectric gate. Here, through application of phenomenological Landau-Ginzburg-Devonshire theory and self-consistent Poisson-Schrodinger model calculations, we show how compositional grading of PbZr1-xTixO3 ferroelectric gates enables a more than twenty-five-fold increase in the LAO/STO channel conductance on/off ratios. Incorporation of polarization gradients in ferroelectric gates can enable breakthrough performance of ferroelectric non-volatile memories. (C) 2015 AIP Publishing LLC.

Metrics

5 Record Views
2 citations in Scopus

Details

UN Sustainable Development Goals (SDGs)

This publication has contributed to the advancement of the following goals:

#7 Affordable and Clean Energy

InCites Highlights

Data related to this publication, from InCites Benchmarking & Analytics tool:

Collaboration types
Domestic collaboration
Web of Science research areas
Physics, Applied
Logo image