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In situ crystallization study of impurity phases in Bi-Fe-O thin films grown by atomic layer deposition
Journal article   Peer reviewed

In situ crystallization study of impurity phases in Bi-Fe-O thin films grown by atomic layer deposition

Andrew R. Akbashev, Matthias Falmbigl, Aleksandr V. Plokhikh and Jonathan E. Spanier
CrystEngComm, v 19(1), pp 166-170
07 Jan 2017

Abstract

Chemistry Chemistry, Multidisciplinary Crystallography Physical Sciences Science & Technology
We report on the phase evolution of pure and Fe-doped bismuth oxide (Bi-O and Bi-Fe-O) thin films grown by atomic layer deposition. In situ X-ray diffraction was used to map the evolution of phase formation and orientational growth of the oxides during the gradual crystallization of the films from the amorphous state on single-crystalline substrates. The formation of (001)-oriented Bi2O2.3 was observed at temperatures as low as 300 degrees C on (001) SrTiO3, with a gradual transformation into Bi2O3. A similar crystallization of Fe-doped Bi2O3 on (111) ZrO2(Y2O3) leads to the formation of (111)-oriented d-Bi2O3 above 400 degrees C instead of the sillenite phase. We thus demonstrate that epitaxial stabilization of the metastable phases can take place during atomic layer deposition of oxides as well as post-deposition annealing. In situ crystallization of the amorphous Bi-Fe-O films revealed the evolution of oxide phases in the film with the sillenite composition. Our results are important for the design of annealing procedures to obtain phasepure epitaxial BiFeO3 thin films from amorphous stoichiometric Bi-Fe-O grown by atomic layer deposition.

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Web of Science research areas
Chemistry, Multidisciplinary
Crystallography
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