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LaAlO3/SrTiO3 Epitaxial Heterostructures by Atomic Layer Deposition
Journal article   Peer reviewed

LaAlO3/SrTiO3 Epitaxial Heterostructures by Atomic Layer Deposition

Nick M. Sbrockey, Michael Luong, Eric M. Gallo, Jennifer D. Sloppy, Guannan Chen, Christopher R. Winkler, Stephanie H. Johnson, Mitra L. Taheri, Gary S. Tompa and Jonathan E. Spanier
Journal of electronic materials, v 41(5), pp 819-823
01 May 2012

Abstract

Engineering Engineering, Electrical & Electronic Materials Science Materials Science, Multidisciplinary Physical Sciences Physics Physics, Applied Science & Technology Technology
Thin films of LaAlO3 were deposited on TiO2-terminated (100) SrTiO3 crystals by atomic layer deposition (ALD), using tris(iso-propylcyclopentadienyl)lanthanum and trimethyl aluminum precursors. Water was used as the oxidizer. The film composition was shown to be controlled by the ratio of La/Al precursor pulses during ALD, with near-stoichiometric LaAlO3 resulting at precursor pulse ratios of 4/1 to 5/1. Films near the stoichiometric LaAlO3 composition were shown to crystallize on subsequent annealing to form epitaxial LaAlO3/SrTiO3 heterostructures. Electrical characterization of these structures was done by two-terminal direct-current (DC) current-voltage scans at room temperature and under high-vacuum conditions. The results show electrical conductivity for the ALD-deposited epitaxial LaAlO3/SrTiO3 heterostructures, which turns on for thickness above four unit cells for the LaAlO3 film.

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Web of Science research areas
Engineering, Electrical & Electronic
Materials Science, Multidisciplinary
Physics, Applied
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