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On direct-writing methods for electrically contacting GaAs and Ge nanowire devices
Journal article   Peer reviewed

On direct-writing methods for electrically contacting GaAs and Ge nanowire devices

Guannan Chen, Eric M. Gallo, Joan Burger, Bahram Nabet, Adriano Cola, Paola Prete, Nico Lovergine and Jonathan E. Spanier
Applied physics letters, v 96(22), pp 223107-223107-3
31 May 2010

Abstract

Physical Sciences Physics Physics, Applied Science & Technology
The electronic transport and gating characteristics in GaAs and Ge nanowires (NWs) are altered significantly following either indirect or direct exposure to a focused Ga(+) ion beam (FIB), such as that used to produce Pt electrical contacts to NWs. While these results challenge the assumptions made in some previously reported work relating to the electronic properties of semiconductor NWs using FIB-assisted production of contacts and/or their leads, local electron beam induced deposition is shown to be a reliable and facile route for producing robust electrical contacts to individual vapor phase-grown NWs in a manner that enables study of their actual carrier transport properties. (C) 2010 American Institute of Physics. [doi:10.1063/1.3441404]

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Web of Science research areas
Physics, Applied
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