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Pyrolyzer Assisted Vapor Transport Deposition of Antimony-Doped Cadmium Telluride
Journal article   Peer reviewed

Pyrolyzer Assisted Vapor Transport Deposition of Antimony-Doped Cadmium Telluride

Bin Du, Gregory A. Manoukian, Harvey Guthrey, Aayush Nahar, Antonio J. N. Oliveira, Kevin D. Dobson, Brian McCandless, Aaron Arehart, Jason B. Baxter and William N. Shafarman
IEEE journal of photovoltaics, pp 1-10
05 Dec 2025

Abstract

Cadmium compounds CdSeTe Doping doping efficiency Films group V doping Heating systems II-VI semiconductor materials in situ doping Photovoltaic cells pyrolysis Scanning electron microscopy Substrates Temperature distribution Temperature measurement
In this study, we developed a new method for in situ Sb doping of CdTe thin films combining vapor transport deposition with a Group V pyrolyzer to address Sb doping concentration and doping efficiency. The Sb doped CdSeTe (CdSeTe:Sb) films were deposited in solar cell structures under variations of Sb dopant source heater, vapor pyrolyzer temperature, and Cd vapor excess. Results indicate that although these parameters do not affect the CdTe morphology or crystal structure, they critically influence doping efficiency and trap concentration. Capacitance-voltage measurements show that a higher dopant heater (T D ) or pyrolyzer (T P ) temperature leads to higher net carrier concentration, achieving a net carrier concentration of 10 16 cm −3 and 20% doping efficiency with a T D /T P combination of 600 °C/1100 °C. By tuning the Cd/Sb flux ratio during CdSeTe:Sb deposition, the lowest defect concentration is achieved at Cd/Sb of 1.4:1, which produced the best V OC CdSeTe:Sb cell. This demonstrates a path to produce high net carrier concentration polycrystalline CdTe thin film with a low concentration of dopant-induced defects.

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Collaboration types
Domestic collaboration
International collaboration
Web of Science research areas
Energy & Fuels
Materials Science, Multidisciplinary
Physics, Applied
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