Journal article
Selective Epitaxial Growth on Germanium Nanowires via Hybrid Oxide-Stabilized/Vapor-Liquid-Solid Growth
Crystal growth & design, v 13(2), pp 491-496
01 Feb 2013
Featured in Collection : UN Sustainable Development Goals @ Drexel
Abstract
The introduction low levels of oxygen during the vapor-liquid-solid growth (VLS) of germanium nanowires causes an oxide sheath to form at the catalyst/nanowire/vapor interface during growth. This results in extremely high aspect ratio nanowires due to the removal of homoepitaxial deposition and the finite energy required for heterogeneous nucleation of germanium on its oxide. With the removal of oxygen, the catalyzed oxide sheath terminates and conventional growth with finite sidewall deposition dominates subsequent growth. The successful transition between oxide-stabilized and conventional VLS regimes can be deliberately manipulated to grow finite conical nanowire segments with discontinuous changes in diameter.
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Details
- Title
- Selective Epitaxial Growth on Germanium Nanowires via Hybrid Oxide-Stabilized/Vapor-Liquid-Solid Growth
- Creators
- Christopher J. Hawley - Drexel UniversityTerrence McGuckin - Drexel UniversityJonathan E. Spanier - Drexel University
- Publication Details
- Crystal growth & design, v 13(2), pp 491-496
- Publisher
- American Chemical Society; Washington, DC
- Number of pages
- 6
- Grant note
- P200A100117 / U.S. Dept. of Education DGE 0654313 / NSF IGERT Fellowship; National Science Foundation (NSF) GAANN-RETAIN program W911NF-08-1-0067 / U.S. Army Research Office
- Resource Type
- Journal article
- Language
- English
- Academic Unit
- Mechanical Engineering and Mechanics
- Web of Science ID
- WOS:000314795300015
- Scopus ID
- 2-s2.0-84873343796
- Other Identifier
- 991019168964204721
UN Sustainable Development Goals (SDGs)
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InCites Highlights
Data related to this publication, from InCites Benchmarking & Analytics tool:
- Web of Science research areas
- Chemistry, Multidisciplinary
- Crystallography
- Materials Science, Multidisciplinary