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Shape-Controlled Vapor-Transport Growth of Tellurium Nanowires
Journal article   Peer reviewed

Shape-Controlled Vapor-Transport Growth of Tellurium Nanowires

Christopher J. Hawley, Brian R. Beatty, Guannan Chen and Jonathan E. Spanier
Crystal growth & design, v 12(6), pp 2789-2793
01 Jun 2012

Abstract

Chemistry Chemistry, Multidisciplinary Crystallography Materials Science Materials Science, Multidisciplinary Physical Sciences Science & Technology Technology
A vapor transport method is employed to synthesize single crystalline tellurium nanowires with tailorable size using tellurium powder in an inert atmosphere. The average nanowire diameter is tunable between 50 and 3000 nm with an associated length of 1 to 22 mu m. Growth temperature and time are used to specifically control the behavior of supersaturation, leading to nucleation and morphological control in this vapor solid growth regime. Analysis of the resulting nanowire product provides insight into the dominant reaction kinetics involved in these growths and suggests routes by which to control growth product. This methodology provides a practical approach to synthesizing high-quality tellurium nanowires of various sizes and their incorporation into two-dimensional mesh-like structures through controlled nucleation and growth dynamics.

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Web of Science research areas
Chemistry, Multidisciplinary
Crystallography
Materials Science, Multidisciplinary
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