Patent
Engineered ferroelectric gate devices
20 Feb 2018
Abstract
Coupling of switchable ferroelectric polarization with the carrier transport in an adjacent semiconductor enables a robust, non-volatile manipulation of the conductance in a host of low-dimensional systems, including the two-dimensional electron liquid that forms at the LaAlO3-SrTiO3 interface. However, the strength of the gate-channel coupling is relatively weak, limited in part by the electrostatic potential difference across a ferroelectric gate. Compositionally grading of PbZr1-xTixO3 ferroelectric gates enables a more than twenty-five-fold increase in the LAO/STO channel conductance on/off ratios. Incorporation of polarization gradients in ferroelectric gates can enable significantly enhanced performance of ferroelectric non-volatile memories.
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Details
- Title
- Engineered ferroelectric gate devices
- Creators
- Jonathan E Spanier - Drexel University, PhysicsGu ZongquanIslam Mohammad Anwarul
- Contributors
- Drexel University (Assignee)
- Resource Type
- Patent
- Language
- English
- Patent
- US9899516B2; B2
- Academic Unit
- Mechanical Engineering and Mechanics; Physics
- Identifiers
- 991021903705604721