Patent
MXene layers as substrates for growth of highly oriented perovskite thin films
03 Oct 2023
Abstract
The present disclosure is directed to using MXene compositions as templates for the deposition of oriented perovskite films, and compositions derived from such methods. Certain specific embodiments include methods preparing an oriented perovskite, perovskite-type, or perovskite-like film, the methods comprising: (a) depositing at least one perovskite, perovskite-type, or perovskite-like composition or precursor composition using chemical vapor deposition (CVD), physical vapor deposition (PVD), or atomic layer deposition (ALD) onto a film or layer of a MXene composition supported on a substrate to form a layered composition or precursor composition; and either (b) (1) heat treating or annealing the layered precursor composition to form a layered perovskite-type structure comprising at least one oriented perovskite, perovskite-type, or perovskite-like composition; or (2) annealing the layered composition; or (3) both (1) and (2).
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Details
- Title
- MXene layers as substrates for growth of highly oriented perovskite thin films
- Creators
- Matthias FalmbiglDominic ImbrendaBabak AnasoriAndrew Lewis Bennett-JacksonZongquan GuYury Gogotsi - Drexel University, Materials Science and EngineeringJonathan E Spanier - Drexel University, Physics
- Resource Type
- Patent
- Language
- English
- Patent
- US11773480B2; B2
- Academic Unit
- Mechanical Engineering and Mechanics; Physics; Materials Science and Engineering
- Identifiers
- 991021893405004721